Understanding Defect and Doping Physics in Semiconductors: from Equilibrium to Extreme-nonequilibrium
Speaker
Bing Huang
Beijing Computational Science Research Center, Department of Physics, Beijing Normal University
Date＆Time
2021.04.16 (Fri) AM 9:00
Location
Aoqing Tang Building, B521
Abstract
It is known that defects or dopants can fundamentally determine the overall electronic structures of semiconductors. In this talk, I will give an introduction on our recent works in this field: under equilibrium conditions, we have developed a unified theory to understand the strain-dependent defect solution, defect levels, and Fermi energy pinning effects, and we also show that new spin-orbital coupling effects may be hidden in the harmful deep-level defects; under nonequilibrium conditions, we have developed theories to understand the formation of complex defects in the surface or interface of semiconductors, and we have developed a unified formula to understand the plasmonic excitation and proposed a new transport model to realize ideal charge transport in ferroelectric superlattices; under extreme-nonequilibrium conditions, we are developing methods to calculate the time-dependent defect formation and evolution in semiconductors and their effects on the fundamental electronic structures of semiconductors.
